Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors

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High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors
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