Source-Bias Dependent Charge Accumulation in P^+-Poly Gate SOI Dynamic Random Access Memory Cell Transistors
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概要
- 論文の詳細を見る
In this paper, we report the dynamic data retention problems caused by the transient leakage current in a cell transistor during the bit-line pull down operatuon in p^+-poly gate fully depleted silicon-on-insulator (FD-SOI) d__-ynamic r__-andom a__-ccess m__-emories (DRAMs) due to the source-induced charge accumulation (SICA) effect in the silicon thin film. Due to the inherent floating body effect in the FD-SOI transistor, charge accumulation in the silicon thin film becomes inevitable when the gate-to-source voltage (V_<GS>) is smaller than the flat-band voltage (V_<FB>). In order to eliminate the transient leakage current problem in p^+-poly gate FD-SOI cell transistor, the ground-precharged bit-line (GPB) sensing method is introduced.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Kim Kinam
Semiconductor R&d Center Samsung Electronics Co.
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Sim Jai-hoon
Semiconductor R&d Center Samsung Electronics Co.
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Kim Kinam
Semiconductor R & D Center Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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