Sim Jai-hoon | Semiconductor R&d Center Samsung Electronics Co.

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors
Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond
Dynamic Data Retention Degradation in FD-SOI DRAM Cells Due to Source-Induced Charge Accumulation(SICA) Effect
Source-Bias Dependent Charge Accumulation in P^+-Poly Gate SOI Dynamic Random Access Memory Cell Transistors

スポンサーリンク