Kim Kinam | Memory Business Samsung Electronics Co. Ltd.

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概要

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著作論文

Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

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