Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Kim Kinam

  Memory Business Samsung Electronics Co. Ltd.

• PARK Ki-Tae

  Memory Business, Samsung Electronics Co., Ltd.

• Park Ki-tae

  Memory Business Samsung Electronics Co. Ltd.

• Sel Jong-sun

  Memory Business Samsung Electronics Co. Ltd.

• Choi Jungdal

  Memory Business Samsung Electronics Co. Ltd.

• LEE SeungChul

  Semiconductor R&D Center, CAE Team

• SEL Jongsun

  Memory Business, Samsung Electronics Co. Ltd.

• Lee Seungchul

  Semiconductor R&d Center Cae Team

関連論文

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• A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
• Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell
• Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories
• Scalable Wordline Shielding Scheme using Dummy Cell beyond 40 nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

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