Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-04-07
著者
-
Jeong Gi‐tae
Somsung Electronics Co. Ltd. Kyunggi‐do Kor
-
Kim Kinam
Samsung Electronics Co. Ltd. Gyeonggi‐do Kor
-
Kim Kinam
Memory Business Samsung Electronics Co. Ltd.
-
Byun Hyun-geun
Memory Division Samsung Electronics Co.
-
KANG Sangbeom
Memory Division, Samsung Electronics
-
Kim Du-eung
Memory Division Samsung Electronics Co.
-
Oh Hyung-rok
Memory Division, Samsung Electronics Co.
-
Cho Beak-hyung
Memory Division, Samsung Electronics Co.
-
Cho Woo
Memory Division, Samsung Electronics Co.
-
Choi Byung-gil
Memory Division, Samsung Electronics Co.
-
Kim Hye-jin
Memory Division, Samsung Electronics Co.
-
Kim Ki-sung
Memory Division, Samsung Electronics Co.
-
Kwak Choong-keun
Memory Division, Samsung Electronics Co.
-
Jeong Gi-tae
Memory Division, Samsung Electronics Co.
-
Jeong Hong-sik
Memory Division, Samsung Electronics Co.
-
Kim Hye-jin
Memory Division Samsung Electronics Co.
-
Oh Hyung-rok
Memory Division Samsung Electronics Co.
-
Jeong Hong‐sik
Somsung Electronics Co. Ltd. Kyunggi‐do Kor
関連論文
- A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor(SSTFT) SRAM cell (ISSCC特集1 SRAM)
- A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor (SSTFT) SRAM cell
- Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
- Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
- Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations
- Ge_2Sb_2Te_5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
- Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell