Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
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概要
- 論文の詳細を見る
The write performance of the 1.8V 64Mb Phase-change Random Access Memory (PRAM) has been improved, which was developed based on 0.12μm CMOS technology. For the improvement of RESET and SET distributions, cell current regulator scheme (CCR) and multiple step-down pulse generator (MSPG) were employed, respectively. The read access time and RESET/SET write time are 68 ns and 10ns/180 ns, respectively.
- 社団法人電子情報通信学会の論文
- 2005-04-07
著者
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Jeong Gi‐tae
Somsung Electronics Co. Ltd. Kyunggi‐do Kor
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Kim Kinam
Samsung Electronics Co. Ltd. Gyeonggi‐do Kor
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Kim Kinam
Memory Business Samsung Electronics Co. Ltd.
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Byun Hyun-geun
Memory Division Samsung Electronics Co.
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KANG Sangbeom
Memory Division, Samsung Electronics
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Kim Du-eung
Memory Division Samsung Electronics Co.
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Oh Hyung-rok
Memory Division, Samsung Electronics Co.
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Cho Beak-hyung
Memory Division, Samsung Electronics Co.
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Cho Woo
Memory Division, Samsung Electronics Co.
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Choi Byung-gil
Memory Division, Samsung Electronics Co.
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Kim Hye-jin
Memory Division, Samsung Electronics Co.
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Kim Ki-sung
Memory Division, Samsung Electronics Co.
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Kwak Choong-keun
Memory Division, Samsung Electronics Co.
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Jeong Gi-tae
Memory Division, Samsung Electronics Co.
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Jeong Hong-sik
Memory Division, Samsung Electronics Co.
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Kim Hye-jin
Memory Division Samsung Electronics Co.
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Cho Woo
Memory Division Samsung Electronics Co.
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Oh Hyung-rok
Memory Division Samsung Electronics Co.
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Cho Beak-hyung
Memory Division Samsung Electronics Co.
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Jeong Hong‐sik
Somsung Electronics Co. Ltd. Kyunggi‐do Kor
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Kang Sangbeom
Memory Division Samsung Electronics Co.
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Kang Sangbeom
Memory Division Samsung Electronics
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Jeong Hong-sik
Memory Division Samsung Electronics Co.
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Jeong Gi-tae
Memory Division Samsung Electronics Co.
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Choi Byung-gil
Memory Division Samsung Electronics Co.
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Kim Ki-sung
Memory Division Samsung Electronics Co.
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Kwak Choong-keun
Memory Division Samsung Electronics Co.
関連論文
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- A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor (SSTFT) SRAM cell
- Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
- Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
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