A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor(SSTFT) SRAM cell (ISSCC特集1 SRAM)

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A 256Mb synchronous burst DDR SRAM is developed based on the 80nm SRAM technology with stacked single-crystal silicon thin film transistor SRAM cell. The chip is designed using hierarchical bit-line architecture.
2005-04-07

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A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor(SSTFT) SRAM cell (ISSCC特集1 SRAM)
A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor (SSTFT) SRAM cell
Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
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