NAM Hyouyoun | Memory Division, Samsung Electronics
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概要
関連著者
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SUH Youngho
Memory Division, Samsung Electronics
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NAM Hyouyoun
Memory Division, Samsung Electronics
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AN Hungjun
Memory Division, Samsung Electronics
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KANG Sangbeom
Memory Division, Samsung Electronics
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LEE Youngdae
Memory Division, Samsung Electronics
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CHOI Byunggil
Memory Division, Samsung Electronics
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LIM Hoon
Memory Division, Samsung Electronics
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KWAK Choongkeun
Memory Division, Samsung Electronics
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BYUN Hyungeun
Memory Division, Samsung Electronics
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Lim Hoon
Memory Division Samsung Electronics
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Byun Hyungeun
Memory Division Samsung Electronics
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Kang Sangbeom
Memory Division Samsung Electronics
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An Hungjun
Memory Division Samsung Electronics
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Suh Youngho
Memory Division Samsung Electronics
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Nam Hyouyoun
Memory Division Samsung Electronics
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Lee Youngdae
Memory Division Samsung Electronics
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Choi Byunggil
Memory Division Samsung Electronics
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Kwak Choongkeun
Memory Division Samsung Electronics
著作論文
- A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor(SSTFT) SRAM cell (ISSCC特集1 SRAM)
- A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transistor (SSTFT) SRAM cell