Choi Jungdal | Memory Business Samsung Electronics Co. Ltd.
スポンサーリンク
概要
関連著者
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Kim Kinam
Memory Business Samsung Electronics Co. Ltd.
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Sel Jong-sun
Memory Business Samsung Electronics Co. Ltd.
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Choi Jungdal
Memory Business Samsung Electronics Co. Ltd.
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Kang Chang-seok
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Sim Jae-sung
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Shin Yoo-cheol
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Park Ki-tae
Memory Business Samsung Electronics Co. Ltd.
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Lee Chang‐hyun
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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KIM Kinam
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Kim Kinam
Technology Develoμment Team Semiconductor R&d Center Samsung Electronics Company
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Kim Kinam
Technology Development Team Memory Device Business Samsung Electronics Co.
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PARK Ki-Tae
Memory Business, Samsung Electronics Co., Ltd.
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LEE Jang-Sik
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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KANG Chang-Seok
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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SHIN Yoo-Cheol
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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LEE Chang-Hyun
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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PARK Ki-Tae
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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SEL Jong-Sun
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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KIM Viena
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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CHOE Byeong-In
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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SIM Jae-Sung
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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CHOI Jungdal
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co. Ltd.
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Choe Byeong-in
Technology Development Team Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd
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Jeon Sanghun
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Kim Kinam
Semiconductor R & D Center Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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KANG Changseok
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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ROH Ukjin
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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LEE Chang-Hyun
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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SHIN Yoocheol
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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SIM Jaesung
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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KIM Juhyung
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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SEL Jongsun
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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JEONG Younseok
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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JUNG Wonseok
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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CHOI Jungdal
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.
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Roh Ukjin
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Kim Juhyung
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Jung Wonseok
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Jeong Younseok
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Jeong Younseok
Semiconductor Device And Material Laboratory Samsung Advanced Institute Of Technology (sait)
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Kim Viena
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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LEE SeungChul
Semiconductor R&D Center, CAE Team
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SEL Jongsun
Memory Business, Samsung Electronics Co. Ltd.
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Kim Viena
Technology Development Team Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd
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Lee Jang-sik
Technology Development Team Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd
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Lee Chang-hyun
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Lee Seungchul
Semiconductor R&d Center Cae Team
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Kim Kinam
Technology Development Memory Device Business Samsung Electronics Co.
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Kang Chang-Seok
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Lee Chang-Hyun
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Choi Jungdal
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Choi Jungdal
Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do 449-711, Korea
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Sim Jae-Sung
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Shin Yoo-Cheol
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Park Ki-Tae
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
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Sel Jong-Sun
Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea
著作論文
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
- Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell