Lee S | Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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概要
- LEE S. Y.の詳細を見る
- 同名の論文著者
- Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.の論文著者
関連著者
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Lee S
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim K
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Kinam
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim K.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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PARK J.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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Lee S.
Advanced Technology Development Samsung Electronics Co. Ltd
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Park J.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Park J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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JEONG H.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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Jeong H.
Advanced Technology Development Samsung Electronics Co. Ltd
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Joo H.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim H
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jeong H.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronics Co. Ltd.
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Kim H.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jeoung H.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang S.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KANG Y.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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CHOI D.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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Kim H.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kang Y.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim H.
Advanced Joining & Welding Research Team Kitech
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Kang Y.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Jung D
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Choi D.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Seung
Hanyang University
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Lee S
Department Of Materials Science & Engineering Hanyang University
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Kim J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Kim Kinam
Technology Develoμment Team Semiconductor R&d Center Samsung Electronics Company
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Kim Kinam
Technology Development Team Memory Device Business Samsung Electronics Co.
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Joo S
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Hai
Korea Institute Of Machinery And Metals
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LEE Soo
Korea Institute of Machinery and Metals
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KO Jae
Korea Institute of Machinery and Metals
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CHUNG Hyung
Korea Institute of Machinery and Metals
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RYOO K.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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SONG Y.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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JEONG C.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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SHIN J.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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JEONG G.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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Yeung F.
Advanced Technology Development Samsung Electronics Co. Ltd
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Ryoo K.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Kim J.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee K.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Lee E.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Song Yoon
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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JUNG J.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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AHN S.
Advanced Technology Development, Samsung Electronics Co., Ltd
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HWANG Y.
Advanced Technology Development, Samsung Electronics Co., Ltd
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JEONG W.
Advanced Technology Development, Samsung Electronics Co., Ltd
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KIM Y.
CAE Team, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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KOH K.
Advanced Technology Development, Samsung Electronics Co., Ltd
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KIM K.
Advanced Technology Development, Samsung Electronics Co., Ltd
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Kim Y.
Cae Team Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Ahn S.
Advanced Technology Development Samsung Electronics Co. Ltd
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Hwang Y.
Advanced Technology Development Samsung Electronics Co. Ltd
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Jeong C.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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JOO H.
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electroni
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SONG Y.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JANG N.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JUNG D.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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KIM H.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JOO H.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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LEE S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JOO S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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PARK S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Kim K.
Advanced Technology Development Samsung Electronics Co. Ltd
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Lee S.
Technical Research Laboratories Posco Korea
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Kim J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim K.
Advanced Composites Center Daewoo Heavy Industries Ltd.
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Jang N.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Kim Kinam
Technology Development Memory Device Business Samsung Electronics Co.
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Jeong G.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Song Y.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Joo S.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Koh K.
Advanced Technology Development Samsung Electronics Co. Ltd
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Kim H.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Jeong W.
Advanced Technology Development Samsung Electronics Co. Ltd
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Park J.
Advanced Technology Development Samsung Electronics Co. Ltd
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KIM H.
Technical Research Laboratory, POSCO
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PARK Jae-Hyun
Advanced Technology Development, Semiconductor R&D Centre, Samsung Electronics Co. Ltd.
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OH J.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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Oh J.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Kim S.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Rhie H.
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Lee E.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Ahn W.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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JUNG D.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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HONG Y.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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KIM J.-H.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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JUNG W.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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KANG J.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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GOH H.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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Hong Y.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LEE Y.
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electroni
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KOO B.
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Kim S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Lee Y.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Goh H.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Koo B.
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Song Y.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jang N.W.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jung D.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Park Jae-Hyun
Advanced Technology Development Team, Semiconductor R&D Centre, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
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Song Y.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jang N.W.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
著作論文
- Microstructure of YBa_2Cu_3O_ Superconductor Synthesized with Y_2BaCuO_5, BaCuO_2 and CuO
- The Reaction Sequence in the System Y_2BaCuO_5-BaCuO_2-CuO for YBa_2Cu_3O_ Formation
- Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration
- Highly Reliable Ring Type Contact Scheme for High Density PRAM
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- GST Confined Structure and Integration of 64Mb PRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
- Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM