Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)

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概要

• 論文の詳細を見る
• 社団法人電子情報通信学会の論文
• 2003-06-25

著者

• Kim Kinam

  Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.

関連論文

• High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
• Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
• Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
• Optimization of Ring Type Electrode Process for High Density PRAM
• High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
• High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
• Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
• Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
• Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
• Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
• Ring Contact Electrode Process for High Density Phase Change Random Access Memory
• Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
• MRAM's future prospects and its challenges
• High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
• Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
• Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)
• [Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
• Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
• Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

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