Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory

概要

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Phase-change random access memory is considered a potential challenger for conventional memories, such as dynamic random access memory and flash memory due to its numerous advantages. Nevertheless, high reset current is the ultimate problem in developing high-density phase-change random access memory (PRAM). We focus on the adoption of Ge2Sb2Te5 confined structures to achieve lower reset currents. By changing from a normal to a GST confined structure, the reset current drops to as low as 0.8 mA. Eventually, our integrated 64 Mb PRAM based on 0.18 μm CMOS technology offers a large sensing margin: $R_{\text{reset}}$ ${\sim}200$ k$\Omega$ and $R_{\text{set}}$ ${\sim}2$ k$\Omega$, as well as reasonable reliability: an endurance of $1.0\times 10^{9}$ cycles and a retention time of 2 years at 85°C.
2005-04-15