High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
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概要
- 論文の詳細を見る
PRAM integration technologies using 3-D cell array transistor were proposed to realize the reliable high density 256Mb PRAM (Phase Change RAM) product. Introducing the 3-D cell array transistor, sufficient programming current with the good scalability and reliability was obtained. The cost effectiveness, reliability and performance in the product level will be reviewed.
- 2006-06-26
著者
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Gitae
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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