Kim Kinam | Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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概要
- KIM Kinamの詳細を見る
- 同名の論文著者
- Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronの論文著者
関連著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Jung Soon-moon
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Lim Hoon
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Cho Wonseok
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Jeong Jaehun
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Jooyoung
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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KWAK Kunho
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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CHO Wonseok
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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KIM Jonghyuk
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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SHIM Jaejoo
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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LIM Hoon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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JEONG Jaehoon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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HONG Changmin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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KIM Jinho
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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CHO Hoosung
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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CHOI Bonghyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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KWON Sunghyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division Samsung Electronic
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Kim Jinho
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kwak Kunho
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Cho Hoosung
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Shim Jaejoo
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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JUNG Soon-Moon
R&D Center, Samsung Electronics
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LIM Hoon
R&D Center, Samsung Electronics
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CHO Wonseok
R&D Center, Samsung Electronics
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JEONG Jaehun
R&D Center, Samsung Electronics
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RAH Youngseop
R&D Center, Samsung Electronics
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PARK Jaekyun
R&D Center, Samsung Electronics
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LEE Keunho
R&D Center, Samsung Electronics
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LEE Jiyeon
R&D Center, Samsung Electronics
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CHA Kyungsik
R&D Center, Samsung Electronics
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CHANG Chulsoon
R&D Center, Samsung Electronics
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JANG Youngchul
R&D Center, Samsung Electronics
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KIM Kinam
R&D Center, Samsung Electronics
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Choi Bonghyun
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kwon Sunghyun
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Hong Changmin
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Jonghyuk
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Chang Chulsoon
R&d Center Samsung Electronics
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Cha Kyungsik
R&d Center Samsung Electronics
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Jang Youngchul
R&d Center Samsung Electronics
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Lee Jiyeon
R&d Center Samsung Electronics
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Lee Keunho
R&d Center Samsung Electronics
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Park Jaekyun
R&d Center Samsung Electronics
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Rah Youngseop
R&d Center Samsung Electronics
著作論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
- Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology