Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology

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2004-09-15

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High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology
3D Device Stacking Technology for Future Memory

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