3D Device Stacking Technology for Future Memory

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• JUNG Soon-Moon

  R&D Center, Samsung Electronics

• Jung Soon-moon

  R&d Center Memory Division Semiconductor Business Samsung Electronics Co. Ltd.

関連論文

• Improvements and Analysis of Neutron Induced Soft Error and Latch-up in High Speed Full CMOS 6T SRAM Products up to 65nm Technology
• 3D Device Stacking Technology for Future Memory

スポンサーリンク