A New Multilayered Structure for Advanced Magnetoresistive Random Access Memory (MRAM) Applications

概要

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It is common practice to use two magnetic layers separated by the non-magnetic layer such as copper for the spin valve system. In this work, three magnetic layers (NiFe, NiFe/Co, and Co) were used to form a spin valve and its magnetic properties were characterized. Due to the difference in the coercive field of the three magnetic layers, two plateaus could be obtained in M-H and R-H curves. Each plateau plays as a recording level. According to the external magnetic fields, four distinguishable resistance states could be identified. The optimum preparative condition for the well defined four states turned out to be NiFe (6 nm)/Cu (2 nm)/NiFe (1.5 nm)/Co(4.5 nm)/Cu(2 nm)/Co (3 nm), where the multi-bit MRAM (more than two bits) was proved to be realized.
社団法人映像情報メディア学会の論文
1997-11-21