An Investigation on Stress Effect in Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Ihn Tae-hyung
Division Of Materials Science Ancl Engineering College Of Engineering Seoul National University
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IHN Tae-Hyung
Div. Mater. and Sci. Eng., Seoul Nat'l Univ.
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LEE Byung-Il
Div. Mater. and Sci. Eng., Seoul Nat'l Univ.
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LEE Seok-Woon
Samsung Electron Co.
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JEON Yoo-Chan
LG semicon Co. Ltd.
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JOO Seung-Ki
Div. Mater. and Sci. Eng., Seoul Nat'l Univ.
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Lee Byung-il
Div. Mater. And Sci. Eng. Seoul Nat'l Univ.
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Joo Seung-ki
Div. Mater. And Sci. Eng. Seoul Nat'l Univ.
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Ihn Tae-hyung
Div. Mater. And Sci. Eng. Seoul Nat'l Univ.
関連論文
- Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
- An Investigation on Stress Effect in Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
- High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallizatiorn Process
- Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization