Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy

概要

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The electronic structures of molecular beam epitaxy (MBE)-grown GaAs and GaN have been studied by means of a technique using a newly developed surface-insensitive probe, namely, high-resolution hard X-ray (HX) synchrotron radiation ($h\nu = 5.95$ keV) photoemission spectroscopy (PES). The obtained valence band spectra and shallow core electronic states are compared with those calculated by the full-potential local density approximation (LDA) calculations explicitly including the Ga $3d$ core state. The experimental valence band spectra show a very good match with the calculations, simulated with linear combinations of the partial density of states. The Ga $3d$ core on $d$ core states in GaN indicates a set of fine structures which are attributed to the Ga $3d$-N $2s$ hybridization effect. The present experiments indicate that HX-PES provides an indispensable probe for investigating valence band electronic structures of materials, which has so far been impossible due to the limitations of proper surface preparation methods.
Japan Society of Applied Physicsの論文
2004-08-01