Thermal Effect of Picosecond-Pulsed Laser Irradiation on Cl-Adsorbed Si(111) Surface
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概要
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The effect of 800 nm picosecond-pulsed laser irradiation on the local adsorbate structure of the Cl/Si(111) surface was investigated using a highly sensitive mass spectrum measurement system. It was found from the desorption profile obtained after laser irradiation at room temperature that the concentration of polychlorides and silicon chloride clusters were increased on the surface. Irradiation to the surface at about 150 K causes decomposition of tetrachloride, fragments of which are trapped by defects. As desorptions exhibit strong anisotropy to laser polarization and cooling the substrate suppresses desorption, it is suggested that the process is inequilibriumly coupled with the substrate lattice due to very short pulse excitation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-01
著者
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Ishikawa Tetsuya
Riken Harima Institute
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SHIRAO Tetsuro
RIKEN/SPring-8
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SHUDO Ken-ichi
RIKEN/SPring-8
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Tanaka Yoshihito
Riken Spring-8
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Tanaka Masatoshi
Department Of Comprehensive Management Matsumoto University
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Shirao Tetsuro
RIKEN/SPring-8, Mikazuki, Sayo-gun, Hyogo 679-5148, Japan
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Tanaka Yoshihito
RIKEN/SPring-8, Mikazuki, Sayo-gun, Hyogo 679-5148, Japan
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Shudo Ken-ichi
RIKEN/SPring-8, Mikazuki, Sayo-gun, Hyogo 679-5148, Japan
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