Measurement of Optical Absorption in InAs/InAlAs Quantum Dots using a Photoluminescence Technique

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概要

• 論文の詳細を見る
• 2001-04-01

著者

• MAKINO Hisao

  Institute for Materials Research, Tohoku University

• YAO Takafumi

  Institute for Materials Research, Tohoku University

• Makino Hisao

  Institute For Material Research Tohoku University

• DAO Lap

  School of Physics, University of New South Wales

• GAL Mike

  School of Physics, University of New South Wales

• KOO B.

  Institute for Material Research, Tohoku University

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• Measurement of Optical Absorption in InAs/InAlAs Quantum Dots using a Photoluminescence Technique
• Ordering of In and Ga in Epitaxially Grown In_Ga_As Films on (001) InP Substrates
• Time Dependence of the Growth Morphology of GaN Single Crystals Prepared in a Na–Ga Melt
• Measurement of Optical Absorption in InAs/InAlAs Quantum Dots using a Photoluminescence Technique
• Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
• Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications

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