Materials design for new functional semiconductors by ad initio electronic structure calculation : Prediction vs. experiment
スポンサーリンク
概要
- 論文の詳細を見る
- 2002-07-10
著者
-
SATO Kazunori
The Institute of Scientific and Industrial Research (ISIR), Osaka University
-
YAMAMOTO Tetsuya
Kochi University of Technology
-
Sato Kazunori
The Institute Of Scientific And Industrial Research Osaka University
-
Katayama-yoshida Hiroshi
The Institute Of Scientific And Industrial Research (isir) Osaka University
-
Yamamoto Tetsuya
Kochi Univ. Tech. Kochi Jpn
関連論文
- Dilute Magnetic Semiconductors Based on Half-Heusler Alloys(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Spinodal Decomposition under Layer by Layer Growth Condition and High Curie Temperature Quasi-One-Dimensional Nano-Structure in Dilute Magnetic Semiconductors
- Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
- Properties of Transparent Conductive Ga-Doped ZnO Films on Glass, PMMA and COP Substrates
- First-Principles Study on the Ferromagnetism and Curie Temperature of Mn-Doped AlX and InX (X=N, P, As, and Sb)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Materials Design of Ferromagnetic Diamond
- Materials Design of Transparent and Half-Metallic Ferromagnets of MgO, SrO and BaO without Magnetic Elements(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- New Class of Diluted Ferromagnetic Semiconductors based on CaO without Transition Metal Elements
- Material Design of Transparent, Half-Metallic and Room-Temperature Ferromagnets in I_2-VI Semiconductors with 4d Transition Metal Element
- Design of Transparent, Half-Metallic Ferromagnetic 4d-Transition-Metal-Doped K_2S with High Curie Temperature
- New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- New High-T_c Half-Heusler Ferromagnets NiMnZ (Z=Si, P, Ge, As)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Materials Design of CuAlO2-Based Dilute Magnetic Semiconductors by First-Principles Calculations and Monte Carlo Simulations
- First-Principles Materials Design of CuAlO2 Based Dilute Magnetic Semiconducting Oxide
- Ab Initio Study for Site Symmetry of Phosphorus-Doped Diamond
- Ab Initio Study of Donor-Hydrogen Complexes for Low-Resistivity n-Type Diamond Semiconductor
- P-Type Doping of the Group V Elements in CuInS_2
- Materials design for new functional semiconductors by ad initio electronic structure calculation : Prediction vs. experiment
- Design of Transparent, Half-Metallic Ferromagnetic $4d$-Transition-Metal-Doped K2S with High Curie Temperature
- New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
- New Class of Diluted Ferromagnetic Semiconductors based on CaO without Transition Metal Elements
- High Curie Temperature and Nano-Scale Spinodal Decomposition Phase in Dilute Magnetic Semiconductors
- Spinodal Decomposition under Layer by Layer Growth Condition and High Curie Temperature Quasi-One-Dimensional Nano-Structure in Dilute Magnetic Semiconductors
- Computational Nano-materials Design for Colossal Thermoelectric-cooling Power by Adiabatic Spin-Entropy Expansion in Nano-superstructures
- Design of Colossal Solubility of Magnetic Impurities for Semiconductor Spintronics by the Co-doping Method
- Super-Paramagnetic Blocking Phenomena and Room-Temperature Ferromagnetism in Wide Band-Gap Dilute Magnetic Semiconductor (Ga, Mn)N