New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
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概要
- 論文の詳細を見る
We propose a new route for ferromagnetic diluted magnetic semiconductors by controlling the impurity-band width ($W$) and the electron-correlation energy ($U$) in the partially occupied impurity band in the condition of highly correlated electron system ($U>W$). Based upon first-principles calculations of K2(S,Si) and K2(S,Ge), we demonstrate that transparent, half-metallic and room-temperature ferromagnetic DMS could be designed even without transition metal elements. The results show that it is possible to fabricate the room-temperature ferromagnets in K2(S,Si) and K2(S,Ge) around 8 at%-impurity concentration.
- 2004-04-15
著者
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SATO Kazunori
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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Seike Masayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Kenmochi Kazuhide
The Institute Of Scientific And Industrial Research Osaka University
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Katayama-yoshida Hiroshi
The Institute Of Scientific And Industrial Research (isir) Osaka University
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Yanase Akira
The Institute Of Scientific And Industrial Research Osaka University
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Yanase Akira
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kenmochi Kazuhide
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Seike Masayoshi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Katayama-Yoshida Hiroshi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Sato Kazunori
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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