New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements

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概要

• 論文の詳細を見る

• We propose a new route for ferromagnetic diluted magnetic semiconductors by controlling the impurity-band width ($W$) and the electron-correlation energy ($U$) in the partially occupied impurity band in the condition of highly correlated electron system ($U>W$). Based upon first-principles calculations of K2(S,Si) and K2(S,Ge), we demonstrate that transparent, half-metallic and room-temperature ferromagnetic DMS could be designed even without transition metal elements. The results show that it is possible to fabricate the room-temperature ferromagnets in K2(S,Si) and K2(S,Ge) around 8 at%-impurity concentration.

• 2004-04-15

著者

• SATO Kazunori

  The Institute of Scientific and Industrial Research (ISIR), Osaka University

• Seike Masayoshi

  The Institute Of Scientific And Industrial Research Osaka University

• Kenmochi Kazuhide

  The Institute Of Scientific And Industrial Research Osaka University

• Katayama-yoshida Hiroshi

  The Institute Of Scientific And Industrial Research (isir) Osaka University

• Yanase Akira

  The Institute Of Scientific And Industrial Research Osaka University

• Yanase Akira

  The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Kenmochi Kazuhide

  The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Seike Masayoshi

  The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Katayama-Yoshida Hiroshi

  The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Sato Kazunori

  The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

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