Design of Colossal Solubility of Magnetic Impurities for Semiconductor Spintronics by the Co-doping Method
スポンサーリンク
概要
- 論文の詳細を見る
Based on first-principles calculations, we propose co-doping method for increasing solubility of magnetic impurities in dilute magnetic semiconductors (DMSs). The concentration dependences of the mixing energy of DMS, such as (Ga,Mn)N, (Ga,Cr)N, (Ga,Mn)As, and (Zn,Cr)Te, show large convexity and these systems have a tendency toward spinodal decomposition. By introducing compensating impurities into these DMS, the mixing energy shows gradual transition from convex to concave concentration dependence resulting in negative mixing energy of magnetic impurities. This observation suggests that the co-doping method dramatically increases the solubility of magnetic impurities in DMS, thus high concentration doping of magnetic impurities into DMS becomes possible.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
-
SATO Kazunori
The Institute of Scientific and Industrial Research (ISIR), Osaka University
-
Katayama-yoshida Hiroshi
The Institute Of Scientific And Industrial Research (isir) Osaka University
関連論文
- Dilute Magnetic Semiconductors Based on Half-Heusler Alloys(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Spinodal Decomposition under Layer by Layer Growth Condition and High Curie Temperature Quasi-One-Dimensional Nano-Structure in Dilute Magnetic Semiconductors
- First-Principles Study on the Ferromagnetism and Curie Temperature of Mn-Doped AlX and InX (X=N, P, As, and Sb)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Materials Design of Ferromagnetic Diamond
- Materials Design of Transparent and Half-Metallic Ferromagnets of MgO, SrO and BaO without Magnetic Elements(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- New Class of Diluted Ferromagnetic Semiconductors based on CaO without Transition Metal Elements
- Material Design of Transparent, Half-Metallic and Room-Temperature Ferromagnets in I_2-VI Semiconductors with 4d Transition Metal Element
- Design of Transparent, Half-Metallic Ferromagnetic 4d-Transition-Metal-Doped K_2S with High Curie Temperature
- New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- New High-T_c Half-Heusler Ferromagnets NiMnZ (Z=Si, P, Ge, As)(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Materials Design of CuAlO2-Based Dilute Magnetic Semiconductors by First-Principles Calculations and Monte Carlo Simulations
- First-Principles Materials Design of CuAlO2 Based Dilute Magnetic Semiconducting Oxide
- Ab Initio Study for Site Symmetry of Phosphorus-Doped Diamond
- Ab Initio Study of Donor-Hydrogen Complexes for Low-Resistivity n-Type Diamond Semiconductor
- P-Type Doping of the Group V Elements in CuInS_2
- Materials design for new functional semiconductors by ad initio electronic structure calculation : Prediction vs. experiment
- Design of Transparent, Half-Metallic Ferromagnetic $4d$-Transition-Metal-Doped K2S with High Curie Temperature
- New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- New Class of Diluted Ferromagnetic Semiconductors based on CaO without Transition Metal Elements
- High Curie Temperature and Nano-Scale Spinodal Decomposition Phase in Dilute Magnetic Semiconductors
- Spinodal Decomposition under Layer by Layer Growth Condition and High Curie Temperature Quasi-One-Dimensional Nano-Structure in Dilute Magnetic Semiconductors
- Computational Nano-materials Design for Colossal Thermoelectric-cooling Power by Adiabatic Spin-Entropy Expansion in Nano-superstructures
- Design of Colossal Solubility of Magnetic Impurities for Semiconductor Spintronics by the Co-doping Method
- Super-Paramagnetic Blocking Phenomena and Room-Temperature Ferromagnetism in Wide Band-Gap Dilute Magnetic Semiconductor (Ga, Mn)N