P-Type Doping of the Group V Elements in CuInS_2
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概要
- 論文の詳細を見る
We have studied the electronic structures of p-type doped CuIn(S_<0.9375>V_<0.0625>)_2 (V=N, P, As, Sb or Bi) based on ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We determined that P and Sb atoms are extremely suitable dopants which can be substituted for S atoms in p-type doped CuInS_2 crystals with lower resistivity. On the other hand, p-type CuInS_2 crystals doped with N or Bi had a higher resistivity than those doped with P or Sb.
- 社団法人応用物理学会の論文
- 1996-12-01
著者
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Katayama-yoshida Hiroshi
The Institute Of Scientific And Industrial Research (isir) Osaka University
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Katayama-yoshida Hiroshi
The Institute Of Scientific And Industrial Research Osaka University:presto Research Development Cor
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YAMAMOTO Tetsuya
The Institute of Scientific and Industrial Research, Osaka University
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Yamamoto Tetsuya
The Institute Of Scientific And Industrial Research Osaka University:department Of Computational Sci
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