Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH_3 Gas as Ru Oxidation Suppressing Agent
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
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Hong Kwon
Memory Research And Development Division Hynix Semiconductor Inc.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory Research And Development Division Hynix Semiconductor Inc.
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KIM Younsoo
Memory Research and Development Division, Hynix Semiconductor Inc.
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PARK Sung-Eon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Sung-eon
Memory Research And Development Division Hynix Semiconductor Inc.
関連論文
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
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- Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH_3 Gas as Ru Oxidation Suppressing Agent
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent