Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D_2O
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概要
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The electrical and reliability characteristics of ultra-thin oxynitride gate dielectric prepared by oxidation of thermal nitride in D_2O ambient were investigated. Compared with H_2O reoxidation, D_2O reoxidation exhibit less hole trapping, larger chargeto-breakdown and significant reduction of interface state generation under the electrical stress. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation. The new oxynitride gate dielectric prepared by D_2O reoxidation provides a good promise for future ultra large scaled integration(ULSI)device applications.
- 社団法人応用物理学会の論文
- 2000-04-01
著者
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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KWON Hyungshin
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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YEO Inseok
Hyundai Electronics Industry Co.
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Kwon Hyungshin
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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