Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (\phi 250 nm) Via-Hole Structure
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概要
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Analysis of asymmetric current--voltage (I--V) of low resistance state (LRS) and high resistance state (HRS) in a W/Pr0.7Ca0.3MnO3 (PCMO) submicron (\phi 250 nm) resistive memory device revealed the formation of a Schottky-like contact in both states. Raman spectroscopy analysis was used to measure the concentration of oxygen vacancies in LRS and HRS. A significant intensity difference at {\sim}610 cm-1 for HRS and LRS indicates that a higher number of oxygen vacancies are created in HRS than in LRS. Based on material analysis, modulation of the oxygen vacancy concentration at the PCMO layer in relation to the redox reaction between W and Mn proposed to be responsible for resistive switching phenomena.
- 2011-10-25
著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee JoonMyoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Joonmyoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Siddik Manzar
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Biju Kuyyadi
Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Liu Xinjun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Kim Insung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Kim Seonghyun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Lee Wootae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Jung Seungjae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Lee Daeseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Sadaf Sharif
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Jung Seungjae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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