Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices
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概要
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We have investigated the effect of high-pressure oxygen annealing (HPOA) on metal–alumina–nitride–oxide–silicon (MANOS)-type flash memory devices. HPOA devices show significant improvement of retention characteristics at elevated temperatures under positive gate bias owing to the reduction of charge loss rate through the blocking oxide. Considering the improvement of electrical characteristics and the change in the Al chemical state, this was attributed to the effective removal of traps and the recovery of the stoichiometry of Al2O3 layer by oxygen passivation. We also confirmed this effect in a Si–Al2O3–Pt capacitor. As a result, we consider that HPOA could be a crucial process for future MANOS-type memory devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Ju Yongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jung Seungiae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee JoonMyoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Yoon Jaesik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Yoon Jaesik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jung Seungjae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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