Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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LEE Byounghun
International SEMATECH, IBM Assignee
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GARDNER Mark
International SEMATECH, AMD assignee
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Gardner Mark
International Sematech Amd Assignee
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Lee Byounghun
International Sematech Ibm Assignee
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