Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• SIM Hyunjun

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• HWANG Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Lee Taeho

  Department Of Materials Science And Engineering Hanyang University

• Sim H

  Kwangju Inst. Sci. And Technol. Kwangju Kor

• Sim Hyunjun

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Taeho

  Materials Science And Engineering Hanyang University

• SAMANTARAY Chandan

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology #1

• YEOM Hanwoong

  Institute of Physics and Applied Physics, Yonsei University

• Yeom Hanwoong

  Institute Of Physics And Applied Physics Yonsei University

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