Sim H | Kwangju Inst. Sci. And Technol. Kwangju Kor

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概要

• 同名の論文著者
• Kwangju Inst. Sci. And Technol. Kwangju Korの論文著者

関連著者

• SIM Hyunjun

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• HWANG Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Sim H

  Kwangju Inst. Sci. And Technol. Kwangju Kor

• Sim Hyunjun

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Taeho

  Department Of Materials Science And Engineering Hanyang University

• Lee Taeho

  Materials Science And Engineering Hanyang University

• Park In

  Information Display Research Institute Hanyang University

• LEE Taeho

  Department of Materials Science and Engineering, Hanyang University

• KO Han-Kyoung

  Department of Materials Science and Engineering, Hanyang University

• AHN Jinho

  Department of Materials Science and Engineering, Hanyang University

• PARK In-Sung

  Information Display Research Institute, Hanyang University

• PARK Hokyung

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Ko Han

  Department Of Materials Science And Engineering Hanyang University

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Jeon S

  Samsung Advanced Inst. Technol. Suwon Kor

• JEON Sanghun

  Department of Materials Science and Engineering, Kwangju Institute of Science and Technology

• SAMANTARAY Chandan

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology #1

• YEOM Hanwoong

  Institute of Physics and Applied Physics, Yonsei University

• Yeom Hanwoong

  Institute Of Physics And Applied Physics Yonsei University

• Jeon Sanghun

  Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology

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著作論文

• Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
• Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
• Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors

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