Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
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概要
- 論文の詳細を見る
- 2006-09-15
著者
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Park In
Information Display Research Institute Hanyang University
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LEE Taeho
Department of Materials Science and Engineering, Hanyang University
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KO Han-Kyoung
Department of Materials Science and Engineering, Hanyang University
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AHN Jinho
Department of Materials Science and Engineering, Hanyang University
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PARK In-Sung
Information Display Research Institute, Hanyang University
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SIM Hyunjun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Ko Han
Department Of Materials Science And Engineering Hanyang University
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Lee Taeho
Department Of Materials Science And Engineering Hanyang University
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Sim H
Kwangju Inst. Sci. And Technol. Kwangju Kor
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Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Taeho
Materials Science And Engineering Hanyang University
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