Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides
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概要
- 論文の詳細を見る
The resistance switching behaviors of SiO2, HfO2, and TiO2 are investigated to elucidate their universal physical origins. It is demonstrated that a multideposition film fabrication process consisting of repeated thin film deposition and low-temperature annealing in O2 ambient leads to superior resistance switching behaviors, such as forming-free switching characteristics, low switching voltage, and high resistance ratio of low- and high-resistance states compared with the conventional sputtered TiO2 film. From the resistance switching characteristics of binary metal oxide films, it is also observed that the device operation parameters, including reset/set voltages and resistance ratio, are related to the dielectric constants of the oxides.
- 2007-04-30
著者
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PARK In-Sung
Information Display Research Institute, Hanyang University
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Ahn Jinho
Department Of Materials Engineering Graduate School Of Advanced Materials And Chemical Engineering H
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Lee Sangsul
Department of Material Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Lee Sangsul
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Park In-Sung
Information Display Research Institute, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Kim Kyong-Rae
Department of Information Display Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Ahn Jinho
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Ahn Jinho
Department of Material Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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AHN Jinho
Department of Computer Science, Kyonggi University
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