Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

概要

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As CMOS technology continues to rapidly scale down, there is an enormous interest in developing metal gate electrodes to replace depleted poly-Si. Bilayer metal structure is one of the potential candidates for tuning the work function of electrode for dual metal gate device. In this study, we report the work function tunability of gate electrode with Ru/Ti bilayer metal structure on conventional thermal SiO_2 dielectrics. The work function is tunable at the range of from 3.95 to 4.96 eV with Ti thickness, between those of bulk Ti and Ru metals. The work function tunability does not depend on the metal interdiffuion but the surface state between two metal layers. The leakage current characteristics of MOS capacitor are consistent with the work function of the electrode.
社団法人電子情報通信学会の論文
2005-06-21