Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ko Han

  Department Of Materials Science And Engineering Hanyang University

• Lee Taeho

  Department Of Materials Science And Engineering Hanyang University

• Lee Taeho

  Materials Science And Engineering Hanyang University

関連論文

• Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
• Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Work function tunability of bilayer metal gate electrode (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
• Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
• Electrical and Structural Characteristics of High-$k$ Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111)

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