Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
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概要
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The initial performance and reliability characteristics of metal–oxide–semiconductor (MOS) capacitors with HfO2 films deposited with H2O or D2O as an oxidant and Hf[N(C2H5)(CH3)]4 as a metal precursor using atomic layer deposition (ALD) were investigated. From secondary ion mass spectroscopy (SIMS) analysis, we observed that deuterium was homogeneously incorporated into the HfO2 film using D2O during ALD. Compared with H2O-processed devices, D2O-processed devices exhibit less charge trapping, less interface trap density generation, and longer time-dependent dielectric breakdown (TDDB) under electrical stress. This improvement of reliability characteristics can be explained by the deuterium isotope effect, which leads to a larger bonding strength of deuterium in the HfO2 film and at the HfO2/Si interface.
- 2006-09-15
著者
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KO Han-Kyoung
Department of Materials Science and Engineering, Hanyang University
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PARK In-Sung
Information Display Research Institute, Hanyang University
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Ahn Jinho
Department Of Materials Engineering Graduate School Of Advanced Materials And Chemical Engineering H
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Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Taeho
Department Of Civil And Environmental Engineering Pusan National University
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Park In-Sung
Information Display Research Institute, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Ko Han-Kyoung
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Ahn Jinho
Department of Material Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Lee Taeho
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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AHN Jinho
Department of Computer Science, Kyonggi University
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