Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Rahman Md.
Department Of Precision Science & Technology And Applied Physics Osaka University
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Rahman Md.
Department Of Agriculture Bsmrau
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Im Kiju
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Im Kiju
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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SON Yunik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Son Yunik
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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PARK Hokyong
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Park Hokyong
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Rahman Md.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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