Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
-
HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
-
Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
YANG Hyundoek
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
-
Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
-
SON Yunik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
Son Yunik
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Yang Hyundoek
Samsung Advanced Inst. Technol (sait) Gyeonggi‐do Kor
-
Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
関連論文
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices
- Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- Improved Reliability Characteristics of Ultrathin SiO_2 Grown by Low Temperature Ozone Oxidation
- Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO_2 Film
- Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
- Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
- Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
- Extracting the Oxide Capacitance Using Inductance -Capacitance-Resistance Meter Measurement on Metal-Oxide-Semiconductor Capacitors : Semiconductors
- Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D_2O
- Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D_2O
- Electrical Characteristics of Ozone-Oxidized HfO_2 Gate Dielectrics
- Ultrashallow p^+/n Junction Formation by 0.5-1 keV Ion Implantation
- Elucidation of ReRAM Mechanism and Improvement of Memory Characteristics by HPHA
- Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics
- Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing
- High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
- Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer
- Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
- Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
- Effect of Plasma Nitridation on the Conduction Mechanism of Ta_2O_5 Gate Dielectric
- High-$k$ Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon
- Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
- Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (\phi 250 nm) Via-Hole Structure
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices
- Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements
- Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
- Electrical and Structural Characteristics of High-$k$ Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111)
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-$k$ Gate Dielectric
- Low-Temperature-Activated Bismuth Ion-Implanted Silicon n+/p Junction
- Nano-Scale Memory Characteristics of Silicon Nitride Charge Trapping Layer with Silicon Nanocrystals
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
- Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing
- Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance
- Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics
- Electrical Characteristics of Metal–Oxide–Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2
- Ultrashallow Arsenic n+/p Junction Formed by AsH3 Plasma Doping
- Low-Temperature-Activated Bismuth Ion-Implanted Silicon n+/p Junction