Ultrashallow Arsenic n+/p Junction Formed by AsH3 Plasma Doping
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概要
- 論文の詳細を見る
We have investigated the ultrashallow n+/p junction formed by AsH3 plasma doping (PLAD) and the effect of hydrogen on dopant activation. Since hydrogen balance gas (99% H2) was used for AsH3 PLAD, the incorporation of a significant concentration of hydrogen resulted after PLAD. The incorporated hydrogen caused various problems, such as low dopant activation, high resistance, and high leakage current. These problems were traced to hydrogen-induced damage, which was confirmed by cross-sectional transmission electron microscopy (XTEM). Therefore, pre-annealing at low temperature, which can effectively reduce the undesired hydrogen effects, is a necessary step toward obtaining a high-quality, ultrashallow arsenic n+/p junction via AsH3 PLAD.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-04-25
著者
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Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Baek Sungkweon
Samsung Electronics Co. Ltd.
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Buh Gyongho
Samsung Electronics Co. Ltd.
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Shin Yugyun
Samsung Electronics Co. Ltd.
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Lee Dongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Heo Sungho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Shin Yugyun
Samsung Electronics Co., Ltd., San #24, Yongin-City, Gyeonggi-Do 449-711, Korea
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Buh Gyongho
Samsung Electronics Co., Ltd., San #24, Yongin-City, Gyeonggi-Do 449-711, Korea
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