Baek Sungkweon | Samsung Electronics Co. Ltd.
スポンサーリンク
概要
関連著者
-
Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Baek Sungkweon
Samsung Electronics Co. Ltd.
-
Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Buh Gyongho
Samsung Electronics Co. Ltd.
-
Shin Yugyun
Samsung Electronics Co. Ltd.
-
Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
-
HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
-
BAEK Sungkweon
Gwangju Institute of Science and Technology
-
BUH Gyongho
Samsung Electronics Co., Ltd.
-
SHIN Yugyun
Samsung Electronics Co., Ltd.
-
LEE Dongkyu
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
-
CHO Changhee
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
-
HEO Sungho
Gwangju Institute of Science & Technology (GIST), Dept. of Materials Sci. & Eng.
-
Cho Changhee
Gwangju Institute Of Science & Technology (gist) Dept. Of Materials Sci. & Eng.
-
Lee Dongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
Heo Sungho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
Shin Yugyun
Samsung Electronics Co., Ltd., San #24, Yongin-City, Gyeonggi-Do 449-711, Korea
-
Buh Gyongho
Samsung Electronics Co., Ltd., San #24, Yongin-City, Gyeonggi-Do 449-711, Korea
著作論文
- Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- Ultrashallow Arsenic n+/p Junction Formed by AsH3 Plasma Doping