Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Song Young
Electrotechnical Laboratory:department Of Physics Seoul National University
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Shim Kyu-hwan
Electronics And Telecommunications Research Institute
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Park Kyung
Electronics And Telecommunications Research Institute
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JEON Sanghun
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Lim Jung-wook
Electronics And Telecommunications Research Institute
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Jeon Sanghun
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
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Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Song Young
Electronics And Telecommunications Research Institute
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