Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• PARK Hokyung

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• HWANG Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Lee Byoung

  Sematech Tx Usa

• Park Hokyung

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Hwang Hyunsang

  Gwangju Inst. Sci. And Technol. Gwangju Kor

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Hwang Hyunsang

  Gwangju Institute Of Science And Technology

• CHOI Rino

  SEMATECH

• LEE Byoung

  IBM Assignee

• YOUNG Chadwin

  SEMATECH

• LEE Jack

  Electrical Engg. The University of Texas at Austin

• CHANG Man

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• LEE Jack

  Advanced Materials Research Center, The University of Texas at Austin

• Lee Byoung

  Ibm

• Chang Man

  Gwangju Institute Of Science And Technology

• Chang Man

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Young Chadwin

  International Sematech (ismt)

• PARK Hokyung

  Gwangju Institute of Science and Technology

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