Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• Sim Jang

  International Sematech

• Lee Byoung

  Sematech Tx Usa

• YOUNG Chadwin

  International SEMATECH

• LEE Byoung

  International SEMATECH

• CHOI Rino

  International SEMATECH

• BERSUKER Gennadi

  International SEMATECH

関連論文

• Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
• Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
• NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
• Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
• Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
• Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
• Transient charging and relaxation in high-k gate dielectrics and its implications
• Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
• Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
• Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
• Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
• Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
• Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

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