BERSUKER Gennadi | International SEMATECH

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著作論文

Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
Transient charging and relaxation in high-k gate dielectrics and its implications
Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

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