Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Brown George
International Sematech (ismt)
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YOUNG Chadwin
SEMATECH
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BERSUKER Gennadi
SEMATECH
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YOUNG Chadwin
International SEMATECH
-
BERSUKER Gennadi
International SEMATECH
-
Young Chadwin
International Sematech (ismt)
-
Majhi Prashant
Phillips Assignee
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WEN Huang-Chun
International SEMATECH (ISMT)
関連論文
- Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
- Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
- NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
- Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
- Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications