High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Yang Dooyoung
Jusung Engineering Co.
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Im Kiju
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Jeon Sanghun
Dept. Of Materials Sci. & Eng. Kwangju Institute Of Science And Technology
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Jung Heungsang
Dit Laboratory Daewoo Electronics Co. Ltd.
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Yang D
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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JUNG Hyungsuk
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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IM Kiju
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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HWANG Hyunsang
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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Yang D
Jusung Engineering Co.
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YANG Dooyoung
Jusung Engineering
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