Analysis of Mechanisms for Hot-Carrier-Induced VLSI Circuit Degradation

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Yang Dooyoung

  Jusung Engineering Co.

• Yang Dooyoung

  Ulsi Laboratory Lg Semicon Co. Ltd.

• HUH Yoonjong

  ULSI Laboratory, LG Semicon, Co., Ltd.

• KIM Sungwook

  ULSI Laboratory, LG Semicon, Co., Ltd.

• SUNG Yungkwon

  Korea University, Electrical Engineering Dept.

• Huh Yoonjong

  Ulsi Laboratory Lg Semicon Co. Ltd.

• Kim Sungwook

  Ulsi Laboratory Lg Semicon Co. Ltd.

• Sung Yungkwon

  Korea University Electrical Engineering Dept.

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• High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
• Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
• Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
• Analysis of Mechanisms for Hot-Carrier-Induced VLSI Circuit Degradation
• Analysis of Mechanisms for Hot-Carrier-Induced VLSI Circuit Degradation

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