Yang Dooyoung | Ulsi Laboratory Lg Semicon Co. Ltd.
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概要
関連著者
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Yang Dooyoung
Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang Dooyoung
Jusung Engineering Co.
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Huh Yoonjong
Ulsi Laboratory Lg Semicon Co. Ltd.
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Sung Yungkwon
Korea University Electrical Engineering Dept.
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Ahn Jae-gyung
R&d Division Hyundai Microelectronics Co.
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Ahn Jae-gyung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Ahn Jae-gyung
Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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HWANG Hyunsang
ULSI Laboratory of LG Semicon Co. Ltd.
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Yang D
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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YOUN Kang-Sik
ULSI Laboratory, LG Semicon Co.
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HUH Yoonjong
ULSI Laboratory, LG Semicon, Co., Ltd.
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KIM Sungwook
ULSI Laboratory, LG Semicon, Co., Ltd.
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SUNG Yungkwon
Korea University, Electrical Engineering Dept.
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Youn Kang-sik
Ulsi Laboratory Lg Semicon Co.
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Hwang Hyunsang
Ulsi Laboratory Lg Semicon Co.
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Yang D
Jusung Engineering Co.
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Kim Sungwook
Ulsi Laboratory Lg Semicon Co. Ltd.
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l'Yee Hyeokjae
ULSI Laboratory, LG Semicon, Co., Ltd., 1 Hyangjeong-Dong, Heungdeok-Gu, Cheongju 360-480, Korea
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Huh Yoonjong
ULSI Laboratory, LG Semicon, Co., Ltd., 1 Hyangjeong-Dong, Heungdeok-Gu, Cheongju 360-480, Korea
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Sung Yungkwon
Korea University, Electrical Engineering Dept. 1, Anam-Dong, Sungbuk-Gu, Seoul 136, Korea
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Yang Dooyoung
ULSI Laboratory, LG Semicon, Co., Ltd., 1 Hyangjeong-Dong, Heungdeok-Gu, Cheongju 360-480, Korea
著作論文
- Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
- Analysis of Mechanisms for Hot-Carrier-Induced VLSI Circuit Degradation
- Analysis of Mechanisms for Hot-Carrier-Induced VLSI Circuit Degradation